English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The introduction of magnetic order on the surface of topological insulatorsin general breaks the two-dimensional character of topological surface state(TSS). Once the TSS disappears, it is improbable to restore the topologicalsurface properties. In this report, we demonstrate that it is possible torestore the inherent TSS by ultra-high vacuum annealing. Starting from anantiferromagnetic Gd-doped Bi2Te3, that has surface state gap without TSSproperties, after annealing we observed the gap closing as well as typical TSSfeatures in physical properties. The microscopic mechanism of atomic migrationand TSS restoration by annealing process is unraveled by the combination ofscanning tunneling microscopy measurements and density functional theorycalculations. This approach to control the surface of topological insulatorsand stabilize the TSS simply by vacuum annealing provides a new platformtowards the exploitation of their topological properties.

Restoration of Topological Surface State by Vacuum Annealing in Magnetically Doped Topological Insulator