English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Here, we report the intriguing observation of stable non-volatile resistanceswitching (NVRS) in single-layer atomic sheets sandwiched between metalelectrodes. NVRS is observed in the prototypical semiconducting (MX2, M=Mo, W;and X=S, Se) transitional metal dichalcogenides (TMDs), and insulatinghexagonal boron nitride (h-BN), which alludes to the universality of thisphenomenon in non-metallic 2D monolayers, and features forming-free switching.This observation of NVRS phenomenon, widely attributed to ionic diffusion,filament and interfacial redox in bulk oxides and electrolytes, inspires newstudies on defects, ion transport and energetics at the sharp interfacesbetween atomically-thin sheets and conducting electrodes. From a contemporaryperspective, switching is all the more unexpected in monolayers since leakagecurrent is a fundamental limit in ultra-thin oxides. Emerging device conceptsin non-volatile flexible memory fabrics, and brain-inspired (neuromorphic)computing could benefit substantially from the pervasive NVRS effect and theassociated wide materials and engineering co-design opportunity.Experimentally, a 50 GHz radio-frequency (RF) monolayer switch is demonstrated,which opens up a new application for electronic zero-static power RF switchingtechnology.

Towards Universal Non-Volatile Resistance Switching in Non-metallic Monolayer Atomic Sheets