English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We report the results of x-ray scattering studies of AlN on c-plane sapphireduring reactive radiofrequency magnetron sputtering. The sensitivity of in situx-ray measurements allowed us to follow the structural evolution of strain androughness from initial nucleation layers to fullyrelaxed AlN films. A growthrate transient was observed, consistent with the initial formation ofnon-coalesced islands with significant oxygen incorporation from the substrate.Following island coalescence, a steady state growth rate was seen with acontinuous shift of the c and a lattice parameters towards the relaxed bulkvalues as growth progressed, with films reaching a fully relaxed state atthicknesses of about 30 nm.

Real-time X-ray Monitoring of the Nucleation and Growth of AlN Epitaxial Films on Sapphire (0001)