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We have investigated the band structure of the bulk crystal and the (001)surface of the \beta-InTe layered crystal subjected to biaxial stretching inthe layer plane. The calculation has been carried out using the full-potentiallinearized augmented plane wave method (FP LAPW) implemented in WIEN2k. It hasbeen shown that at the strain \Deltaa/a=0.06, where a is the lattice parameterin the layer plane, the band gap in the electronic spectrum collapses. Withfurther strain increase a band inversion occurs. The inclusion of thespin-orbit interaction reopens the gap in the electronic spectrum of a bulkcrystal, and our calculations show that the spectrum of the surface states hasthe form of a Dirac cone, typical for topological insulators.

A new topological insulator - \beta-InTe strained in the layer plane