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Boron carbide thin films of different thicknesses deposited by ion beamsputtering were studied. The deposited films were characterized by grazingincidence hard x-ray reflectivity (GIXR), resonant soft x-ray reflectivity(RSXR), x-ray photo electron spectroscopy (XPS), resonant Rutherfordbackscattering spectrometry (RRBS), and time of flight secondary ion massspectrometry (TOF-SIMS). An in-depth profile of the chemical elementsconstitute the films is reconstructed based on analysis of reflectivity curvesmeasured in the vicinity of B K-edge. The composition of films is closelydependent on film thickness. Boron to Carbon (B/C) ratio reaches to ~4 as thethickness of deposited films increases. The B/C ratio estimated from RSXRmeasurements are in agreement with the RRBS measurements. TOF-SIMS data alsosuggested that decrease in boron content with decrease in film thickness. XPSmeasurements confirm the presence of little amount of B atoms on the surface oflow thickness film.

Investigation of thickness dependent composition of boron carbide thin films by resonant soft x-ray reflectivity