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The thermal stability of most electronic and photo-electronic devicesstrongly depends on the relationship between Schottky Barrier Height (SBH) andtemperature. In this paper, the possible of thermionic current depicted viacorrect and reliability relationship between forward current and voltage isconsequently discussed, the intrinsic SBH insensitive to temperature can becalculated by modification on Richardson- Dushman`s formula suggested in thispaper. The results of application on four hetero-junctions prove that themethod proposed is credible in this paper, this suggests that the I/V/T methodis a feasible alternative to characterize these heterojunctions.

Extraction of Schottky barrier height insensitive to temperature via forward currentvoltage- temperature measurements