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A Si-based monolithic laser is highly desirable for full integration ofSi-photonics. Lasing from direct bandgap group-IV GeSn alloy has opened acompletely new venue from the traditional III-V integration approach. Wedemonstrated optically pumped GeSn lasers on Si with broad wavelength coveragefrom 2 to 3 {\mu}m. The GeSn alloys were grown using newly developed approacheswith an industry standard chemical vapor deposition reactor and low-costcommercially available precursors. The achieved maximum Sn composition of 17.5%exceeded the generally acknowledged Sn incorporation limits for using similardeposition chemistries. The highest lasing temperature was measured as 180 Kwith the active layer thickness as thin as 260 nm. The unprecedented lasingperformance is mainly due to the unique growth approaches, which offerhigh-quality epitaxial materials. The results reported in this work show amajor advance towards Si-based mid-infrared laser sources for integratedphotonics.

Si-based GeSn lasers with wavelength coverage of 2 to 3 {\mu}m and operating temperatures up to 180 K