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We perform a detailed experimental and theoretical study of the transitionfrom multiphoton to optical-field photoemission from n-doped, single-crystalsilicon nanotips. Around this transition, we measure an enhanced emission rateas well as intensity-dependent structure in the photoelectron yield from theilluminated nanostructures. Numerically solving the time-dependentSchr\"odinger equation (TDSE), we demonstrate that the excess emission derivesfrom the build-up of standing electronic wavepackets near the surface of thesilicon, and the intensity dependent structure in this transition results fromthe increased ponderomotive potential and channel closing effects. By way oftime-dependent perturbation theory (TDPT), we then show that the visibility ofintensity dependent structure, the transition rate from multiphoton tooptical-field emission, and scaling rate at high intensities are all consistentwith a narrow band of ground-state energies near the conduction band dominatingthe emission process in silicon. These results highlight the importance ofconsidering both coherent electron wavepacket dynamics at the emitter surfaceas well as the ground-state energy distribution when interpreting strong-fieldphotoemission from solids.

Examining the Transition from Multiphoton to Optical-Field Photoemission From Silicon Nanostructures