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We report on the interfacial electronic properties of HfO2 gate dielectricsboth, with GaN towards normally-OFF recessed HEMT architectures and the AlGaNbarrier for normally-ON AlGaN/GaN MISHEMTs for GaN device platforms on Si. Aconduction band offset of 1.9 eV is extracted for HfO2/GaN along with a verylow density of fixed bulk and interfacial charges. Conductance measurements onHfO2/GaN MOSCAPs reveal an interface trap state continuum with a density of9.37x1012 eV-1cm-2 centered at 0.48 eV below EC. The forward and reversecurrent densities are shown to be governed by Fowler-Nordheim tunneling andPoole-Frenkel emission respectively. Normally-ON HfO2/AlGaN/GaN MISHEMTsexhibit negligible shifts in threshold voltage, transconductances of 110mS/mmfor 3 {\mu}m gate length devices, and three-terminal OFF-state gate leakagecurrents of 20 nA/mm at a VD of 100 V. Dynamic capacitance dispersionmeasurements show two peaks at the AlGaN/GaN interface corresponding to slowand fast interface traps with a peak Dit of 5.5x1013 eV-1cm-2 and 1.5x1013eV-1cm-2 at trap levels 0.55 eV and 0.46 eV below EC respectively. TheHfO2/AlGaN interface exhibits a peak Dit of 4.4x1013 eV-1cm- 2 at 0.45 eV belowEC.

Dielectric Engineering of HfO2 Gate Stacks Towards Normally-ON and Normally-OFF GaN HEMTs on Silicon