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Among the n-type metal oxide materials used in the planar perovskite solarcells, zinc oxide (ZnO) is a promising candidate to replace titanium dioxide(TiO2) due to its relatively high electron mobility, high transparency, andversatile nanostructures. Here, we present the application of low temperaturesolution processed ZnO/Al-doped ZnO (AZO) bilayer thin film as electrontransport layers (ETLs) in the inverted perovskite solar cells, which provide astair-case band profile. Experimental results revealed that the powerconversion efficiency (PCE) of perovskite solar cells were significantlyincreased from 12.25 to 16.07% by employing the AZO thin film as the bufferlayer. Meanwhile, the short-circuit current density (Jsc), open-circuit voltage(Voc), and fill factor (FF) were improved to 20.58 mA/cm2, 1.09V, and 71.6%,respectively. The enhancement in performance is attributed to the modifiedinterface in ETL with stair-case band alignment of ZnO/AZO/CH3NH3PbI3, whichallows more efficient extraction of photogenerated electrons in the CH3NH3PbI3active layer. Thus, it is demonstrated that the ZnO/AZO bilayer ETLs wouldbenefit the electron extraction and contribute in enhancing the performance ofperovskite solar cells.

A Design Based on Stair-case Band Alignment of Electron Transport Layer for Improving Performance and Stability in Planar Perovskite Solar Cells