English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The rise of atomically thin materials has the potential to enable a paradigmshift in modern technologies by introducing multi-functional materials in thesemiconductor industry. To date the growth of high quality atomically thinsemiconductors (e.g. WS2) is one of the most pressing challenges to unleash thepotential of these materials and the growth of mono- or bi-layers with highcrystal quality is yet to see its full realization. Here, we show that thenovel use of molecular precursors in the controlled synthesis of mono- andbi-layer WS2 leads to superior material quality compared to the widely usedtopotactic transformation of WO3-based precursors. Record high room temperaturecharge carrier mobility up to 52 cm2/Vs and ultra-sharp photoluminescencelinewidth of just 36 meV over submillimeter areas demonstrate that the qualityof this material supersedes also that of naturally occurring materials. Byexploiting surface diffusion kinetics of W and S species adsorbed onto asubstrate, a deterministic layer thickness control has also been achievedpromoting the design of scalable synthesis routes.

High-Mobility and High-Optical Quality Atomically Thin WS2