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Micro-cantilevers (MCs) are widely used in sensing, probing and a variety ofother purposes. Apart from Si, the most versatile material in the micro domain,SiO2 MCs have attracted much attention lately. In this study, fabrication ofSiO2 MCs using wet anisotropic etching technique is reported. Thermally grownSiO2 (300 nm) layer on single crystalline(c-) Si is utilized for themicro-fabrication. Standard lithographic procedure was followed and theexposure of the photo-resist was performed by mask-less direct laser writer.Various orientations on the c-Si wafer, their properties and implications onthe structure and integrity of the released SiO2 MC are discussed. The 110direction was found to be much time consuming and sticking of the releasedstructures was almost evident. On the other hand 100 and 410 directions showedlesser release time and higher stability of the released structures due tounder-etching along the width of the MCs.

Si Orientation Dependent Release of SiO2 Microcantilevers by Wet Chemical Etching Method