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In this work, methods to determine more accurate doping profiles insemiconductors is explored where trap-induced artifacts such as hysteresis anddoping artifacts are observed. Specifically in CIGS, it is shown that this fastcapacitance-voltage (C-V) approach presented here allows for accurate dopingprofile measurement even at room temperature, which is typically not possibledue to the large ratio of trap concentration to doping. Using deep leveltransient spectroscopy (DLTS) measurement, the deep trap responsible for theabnormal C-V measurement above 200 K is identified. Importantly, this fast C-Vcan be used for fast evaluation on the production line to monitor the truedoping concentration, and even estimate the trap concentration. Additionally,the influence of high conductance on the apparent doping profile at differenttemperature is investigated.

Fast C-V method to mitigate effects of deep levels in CIGS doping profiles