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The n-type tensile-strained Ge can be used as high-efficient light-emittingmaterials. To reveal the influence of n-type doping on the electronic structureof Ge, we have computed the electronic structure of P, As and Sb doped Ge usingfirst-principles calculation and band unfolding technique. We find that thesen-type doping can induce both indirect and direct band gap narrowing, whichwell reproduce experimental observation that red-shifts occur inphotoluminescence spectra of Ge with n-type doping. We reveal that the indirectband gap narrowing is mainly caused by impurity state, while the direct bandgap narrowing is a result of lattice distortion induced by the dopant atom.Moreover, we find that it can use E_g^{\Gamma}-E_g^L to explain the voltageincrease was needed to reach the same current densities of light emissionthrough the different samples with increasing doping concentrations.

Effects of P, As, and Sb heavy doping on band gap narrowing of germanium as light-emitting materials