English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

FinFETs have replaced the conventional bulk CMOS transistors in the sub-20nmtechnology. One of the key issues to consider is, the vulnerability of FinFETbased circuits to multiple node charge collection due to neutron-inducedstrikes. In this paper, we perform a device simulation based characterizationstudy on representative layouts of 14nm bulk FinFETs in order to study theextent to which multiple transistors are affected. We find that multipletransistors do get affected and the impact can last up to five transistors away(~200nm). We show that the potential of source/drain regions in theneighborhood of the strike is a significant contributing factor. In the case ofmulti-fin FinFETs, the charge collected per fin is seen to reduce as the numberof fins increase. Thus, smaller FinFETs are susceptible to high amounts ofcharge collection.

Neutron-induced strike: Study of multiple node charge collection in 14nm FinFETs