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We demonstrate Au-assisted vapor-solid-solid (VSS) growth of Ge nanowires(NWs) by molecular beam epitaxy (MBE) at 220 {\deg}C, which is compatible withthe temperature window for Si-based integrated circuit. Low temperature grownGe NWs hold a smaller size, similar uniformity and better fit with Au tips indiameter, in contrast to Ge NWs grown at around or above the eutectictemperature of Au-Ge alloy in the vapor-liquid-solid (VLS) growth. Three growthorientations were observed on Ge (110) by the VSS growth at 220 {\deg}C,differing from only one growth direction of Ge NWs by the VLS growth at a hightemperature. The evolution of NWs dimension and morphology from the VLS growthto the VSS growth is qualitatively explained via analyzing the mechanism of thetwo growth modes.

The Vapor-Solid-Solid Growth of Ge Nanowires on Ge (110) by Molecular Beam Epitaxy