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Layered semiconductors show promise as channel materials for field-effecttransistors (FETs). Usually, such devices incorporate solid back or top gatedielectrics. Here, we explore de-ionized (DI) water as a solution top gate forfield-effect switching of layered semiconductors including SnS2, MoS2, andblack phosphorus. The DI water gate is easily fabricated, can sustain rapidbias changes, and its efficient coupling to layered materials provides highon-off current ratios, a near-ideal sub-threshold swing, and enhancedshortchannel behavior even for FETs with thick, bulk-like channels. Screeningby the high-k solution gate eliminates hysteresis due to surface and interfacetrap states and substantially enhances the field-effect mobility. The onset ofwater electrolysis sets the ultimate limit to DI water gating at large negativegate bias. Measurements in this regime show promise for aqueous sensing,demonstrated here by the amperometric detection of glucose in aqueous solution.DI water gating of layered semiconductors can be harnessed in research on novelmaterials and devices, and it may with further development find broadapplications in microelectronics and sensing.

Layered semiconductor devices with water top-gates: High on-off ratio field-effect transistors and aqueous sensors