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200 nm thick SiO2 layers grown on Si substrates and Ge ions of 150 keV energywere implanted into SiO2 matrix with Different fluences. The implanted sampleswere annealed at 950 C for 30 minutes in Ar ambience. Topographical studies ofimplanted as well as annealed samples were captured by the atomic forcemicroscopy (AFM). Two dimension (2D) multifractal detrended fluctuationanalysis (MFDFA) based on the partition function approach has been used tostudy the surfaces of ion implanted and annealed samples. The partitionfunction is used to calculate generalized Hurst exponent with the segment size.Moreover, it is seen that the generalized Hurst exponents vary nonlinearly withthe moment, thereby exhibiting the multifractal nature. The multifractality ofsurface is pronounced after annealing for the surface implanted with fluence7.5X1016 ions/cm^2.

Morphological characterization of Ge ion implanted SiO2 matrix using multifractal technique