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In this paper, we aim to understand the apparent characteristics of IQE andI-V curve in AlGaInP and InGaN LED devices. For the analysis, we separate thecurrent into radiative current and non-radiative current component by using theinformation of IQE. We carefully analyze each current component by idealityfactor, S parameter, and the modified Shockley diode equation which is suitablefor LED device. Through the analyses, it has been found that thecharacteristics of respective current components are basically similar for bothsamples while the physical origin of the potential drop induced by radiativecurrent and the amount of double injection current induced non-radiativecurrent by are different. Compared with AlGaInP LEDs, the InGaN LEDs havehigher degrees of electron overflow initiated by low recombination rate inactive region, causing both the efficiency droop and the higher operatingvoltage. To remedy this, the radiative recombination rate and/or the activevolume should be increased further.

Comparative Analysis of Current Component in InGaN-based Blue and AlGaInP-based Red Light-emitting Diode