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The transverse magnetoresistance of thin films of the Diluted MagneticSemiconductor Zn$_{1-x}$Co$_{x}$O:Al on glass was studied for temperatures inthe range of 5 to 100 K. Measurements were made on thin films grown by rfmagnetron sputtering, with a thickness of approximately 200 nm. ZnO was alloyedwith Co to a concentration $x$ of 0.1 and co-doped with a 5.5% wt concentrationof Al. The electrical resistivity was measured along the sample surface by thefour-point probe method with a magnetic field of up to 4 T appliedperpendicular to the surface of the film. The experimental results of themagnetoresistance have been interpreted by means of a semiclassical model thatcombines a relaxation-time approximation to describe scattering processes inZnO and a phenomenological approach to the spin-disorder scattering due to theindirect exchange interaction of the magnetic impurities.

Transverse Magnetoresistance of Zn$_{0.9}$Co$_{0.1}$O:Al Thin Films