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Flash memory technology is widely common in modern microelectronics, and isessentially affecting our daily life. Considering the recent progress inphotonic circuitry, and in particular silicon photonics circuitry, there is nowan opportunity to embed the flash memory technology in photonic applications. Aparticularly promising candidate that can benefit from such integration is thephotonic resonator. As of today, chip scale resonators are essential buildingblocks in modern silicon photonic platform. However, their properties, and inparticular their resonance frequencies deviate from their designed values dueto unavoidable fabrication imperfections, imposing a stringent limitation onthe applicability of such devices. Here we present a solution for this majorobstacle and demonstrate electrical approach for post trimming of suchresonators. This is achieved by integrating the well-established flash memorytechnology into the photonic circuitry. More specifically, we use the nanoscaleSilicon-Oxide-Nitride-Oxide-Silicon (SONOS) structure in order to trap chargesin the thin silicon nitride layer, which is located in close proximity to thesilicon device layer. This enables the accumulation of charges in the silicon,modifying the effective index of the optical mode and consequently theresonance frequency. By doing so, we provide a robust and elegant CMOScompatible memory solution, which can be easily manufactured andcommercialized. We expect such an approach to pave the way for even moreefficient utilization of resonators and interferometers in chip scale photonicand electro optic systems, with wide range of applications such as filters,modulators, sensors, and lasers, to name a few.

Post trimming of silicon photonics microresonators by nanoscale flash memory technology