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As an attempt to further elucidate the operating voltage increase inInGaN-based light-emitting diodes (LEDs), the radiative and nonradiativecurrent components are separately analyzed in combination with the Shockleydiode equation. Through the analyses, we have shown that the increase inoperating voltage is caused by phase space filling effect in high injection. Wehave also shown that the classical Shockley diode equation is insufficient tocomprehensively explain the I-V curve of the LED devices since the transportand recombination characteristics of respective current components arebasically different. Hence, we have proposed a modified Shockley equationsuitable for modern LED devices. Our analysis gives a new insight on the causeof the wall-plug-efficiency drop influenced by such factors as the efficiencydroop and the high operating voltage in InGaN LEDs.

Origin of Operating Voltage Increase in InGaN-based Light-emitting  Diodes under High Injection: Phase Space Filling Effect on Forward Voltage  Characteristics