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Adding sufficient tensile strain to Ge can turn the material to a directbandgap group IV semiconductor emitting in the mid-infrared wavelength range.However, highly strained-Ge cannot be directly grown on Si due to its largelattice mismatch. In this work, we have developed a process based on Gemicro-bridge strain redistribution intentionally landed to the Si substrate.Traction arms can be then partially etched to keep only localized strained-Gemicro-blocks. Large tunable uniaxial stresses up to 4.2% strain weredemonstrated bonded on Si. Our approach allows to envision integratedstrained-Ge on Si platform for mid-infrared integrated optics.

Highly strained Ge micro-blocks bonded on Si platform for Mid-Infrared photonic applications