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The phosphorous activation in Ge n$^{+}$/p junctions is compared in terms ofjunction depth, by using laser spike annealing at 860{\deg}C for 400$\mu$s. Thereverse junction leakage is found to strongly depend on the abruptness ofdopant profiles. A shallow and abrupt junction is shown to have lowerphosphorous activation level, due to surface dose loss, and higher band-to-bandtunneling (BTBT) leakage, when compared to the deep junction. Simulations werecarried out to evaluate the lowest achievable OFF-state currents (I$_{OFF}$)for Ge double-gate FETs when using such an abrupt junction. Our resultsindicate that a Ge body thickness smaller than 5 nm is required to suppress theBTBT leakage and meet the requirement for the high performance devices definedby the International Technology Roadmap for Semiconductors (I$_{OFF}$ =10$^{-7}$ A/$\mu$m).

Impact of Junction Depth and Abruptness on the Activation and the Leakage Current in Germanium n$^{+}$/p Junctions