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We propose a table-top method to obtain bilayer quasi-free-standingepitaxial-graphene (QFSEG) on SiC(0001). By applying a microwave annealing inair to a monolayer epitaxial graphene (EG) grown on SiC(0001), the buffer layeris decoupled from the SiC substrate and becomes the second EG layer asconfirmed by the low energy electron diffraction, high-resolution transmissionelectron microscopy, Raman scattering spectroscopy, X-ray photoelectronspectroscopy, and angle-resolved photoelectron spectroscopy. The most likelymechanism of the decoupling is given by the oxidation of the SiC surface, whichis quite similar to what happens in conventional annealing method in air butwith a process time by more than one order of magnitude less.

A Table-Top Formation of Bilayer Quasi-Free-Standing Epitaxial-Graphene on SiC(0001) by Microwave Annealing in Air