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The investigation of optoelectronic devices based on two-dimensionalmaterials and their heterostructures is a very active area of investigationwith both fundamental and applied aspects involved. We present a description ofa home-built scanning photocurrent microscope that we have designed anddeveloped to perform electronic transport and optical measurements oftwo-dimensional materials based devices. The complete system is ratherinexpensive (<10000 EUR) and it can be easily replicated in any laboratory. Toillustrate the setup we measure current-voltage characteristics, in dark andunder global illumination, of an ultra-thin PN junction formed by the stackingof an n-doped few-layer MoS2 flake onto a p-type MoS2 flake. We then acquirescanning photocurrent maps and by mapping the short circuit current generatedin the device under local illumination we find that at zero bias thephotocurrent is generated mostly in the region of overlap between the n-typeand p-type flakes.

A versatile scanning photocurrent mapping system to characterize optoelectronic devices based on 2D materials