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Using recently available GaN FETs, a 600 Volt three-stage, multi-FET switchhas been developed having 2 nanosecond rise time driving a 200 Ohm load withthe potential of approaching 30 MHz average switching rates. Possibleapplications include driving particle beam choppers kicking bunch-by-bunch andbeam deflectors where the rise time needs to be custom tailored. This paperreports on the engineering issues addressed, the design approach taken and someperformance results of this switch.

A 600 Volt Multi-Stage, High Repetition Rate GaN FET Switch