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In this work, we evaluate a multitude of metal-oxide bi-layers anddemonstrate the benefits from increased memory stability via multibit memoryoperation. We introduce a programming methodology that allows for operatingmetal-oxide memristive devices as multibit memory elements with highly packedyet clearly discernible memory states. We finally demonstrate a 5.5-bit memorycell (47 resistive states) with excellent retention and power consumptionperformance. This paves the way for neuromorphic and non-volatile memoryapplications.

Multibit memory operation of metal-oxide bi-layer memristors