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The graphene/MoS2 heterojunction formed by joining the two componentslaterally in a single plane promises to exhibit a low-resistance contactaccording to the Schottky-Mott rule. Here we provide an atomic-scaledescription of the structural, electronic, and magnetic properties of this typeof junction. We first identify the energetically favorable structures in whichthe preference of forming C-S or C-Mo bonds at the boundary depends on thechemical conditions. We find that significant charge transfer between grapheneand MoS2 is localized at the boundary. We show that the abundant 1D boundarystates substantially pin the Fermi level in the lateral contact betweengraphene and MoS2, in close analogy to the effect of 2D interfacial states inthe contacts between 3D materials. Furthermore, we propose specific ways inwhich these effects can be exploited to achieve spin-polarized currents.

Properties of In-Plane Graphene/MoS2 Heterojunctions