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The illumination of a single-layer transition metal dichalcogenide with anelliptically-polarized light beam is shown to give rise to a differential rateof inter-band carrier excitation between the valence and conduction statesaround the valley edges, $ K $ and $ K^{'} $. This rate with a lineardependence on the beam ellipticity and inverse of the optical gap manifests asan asymmetric Fermi distribution between the valleys or a non-equilibriumpopulation which under an external field and a Berry curvature inducedanomalous velocity results in an externally tunable finite valley Hall current.Surface imperfections that influence the excitation rates are included throughthe self-consistent Born approximation. Additionally, we show that circulardichroism in the vicinity of the valley edges also exhibits an ellipticitydependence.

Imparity in valley population for single layer transition metal dichalcogenides under elliptical polarization