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In scaling of transistor dimensions with low source-to-drain currents, 1Dsemiconductors with certain electronic properties are highly desired. Wediscover three new 1D materials, SbSeI, SbSI and SbSBr with high stability andnovel electronic properties based on first principles calculations. Bothdynamical and thermal stability of these 1D materials are examined. Thebulk-to-1D transition results in dramatic changes in band gap, effective massand static dielectric constant due to quantum confinement, making 1D SbSeI ahighly promising channel material for transistors with gate length shorter than1 nm. Under small uniaxial strain, these materials are transformed fromindirect into direct band gap semiconductors, paving the way for optoelectronicdevices and mechanical sensors. Moreover, the thermoelectric performance ofthese materials is significantly improved over their bulk counterparts.Finally, we demonstrate the experimental feasibility of synthesizing suchatomically sharp V-VI-VII compounds. These highly desirable properties renderSbSeI, SbSI and SbSBr promising 1D materials for applications in futuremicroelectronics, optoelectronics, mechanical sensors, and thermoelectrics.

Atomically sharp 1D SbSeI, SbSI and SbSBr with high stability and novel  properties for microelectronic, optoelectronic, and thermoelectric  applications