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We introduce a method of local gating for van der Waals heterostructures,employing a few-layer graphene patterned bottom gate. Being a member of the 2Dmaterial family, few-layer graphene adapts perfectly to the commonly usedstacking method. Its versatility regarding patterning as well as its flatnessmake it an ideal candidate for experiments on locally gated 2D materials.Moreover, in combination with ultra-thin hexagonal boron nitride as aninsulating layer, sharp potential steps can be created and the quality of theinvestigated 2D material can be sustained. To underline the good feasibilityand performance, we show results on transport experiments in periodicallymodulated graphene- boron nitride heterostructures, where the charge carrierdensity is tuned via locally acting patterned few layer graphene bottom gatesand a global back gate.

Few-layer graphene patterned bottom gates for van der Waals heterostructures