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We report electrical (angular magneto-resistance, and Hall), thermal (heatcapacity) and spectroscopic (Raman, x-ray photo electron, angle resolved photoelectron) characterization of bulk Bi2Se3 topological insulator, which is beingis grown by self flux method through solid state reaction from high temperature(950C) melt and slow cooling (2C/hour) of constituent elements. Bi2Se3exhibited metallic behaviour down to 5K. Magneto transport measurementsrevealed linear up to 400% and 30% MR at 5K under 14 Tesla field inperpendicular and parallel field direction respectively. We noticed that themagneto-resistance (MR) of Bi2Se3 is very sensitive to the angle of appliedfield. MR is maximum when the field is normal to the sample surface, while itis minimum when the field is parallel. Hall coefficient (RH) is seen nearlyinvariant with negative carrier sign down to 5K albeit having near periodicoscillations above 100K. Heat capacity (Cp) versus temperature plot is seenwithout any phase transitions down to 5K and is well fitted (Cp = gammaT +betaT3) at low temperature with calculated Debye temperature (ThetaD) value of105.5K. Clear Raman peaks are seen at 72, 131 and 177 cm-1 corresponding toA1g1, Eg2 and A1g2 respectively. Though, two distinct asymmetric characteristicpeak shapes are seen for Bi 4f7/2 and Bi 4f5/2, the Se 3d region is found to bebroad displaying the overlapping of spin - orbit components of the same.Angle-resolved photoemission spectroscopy (ARPES) data of Bi2Se3 revealeddistinctly the bulk conduction bands (BCB), surface state (SS), Dirac point(DP) and bulk valence bands (BVB) and 3D bulk conduction signatures are clearlyseen. Summarily, host of physical properties for as grown Bi2Se3 crystal arereported here.

Electrical, Thermal and Spectroscopic Characterization of Bulk Bi2Se3 Topological Insulator