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In this technical note, we address the comments on the energy estimates forMagnetoelectric Spin-orbit (MESO) Logic, a new logic device proposed by theauthors. We provide an analytical derivation of the switching energy, andsupport it with time-domain circuit simulations using a self-consistentferroelectric (FE) compact model. While the energy to charge a capacitor isdissipated in the interconnect and transistor resistance, we note that theenergy to switch a capacitor and a FE is independent of the interconnectresistance value to the first order. Also device design can mitigate theparasitic energy losses. We further show the circuit simulations for a sub 10aJ switching operation of a MESO logic device comprehending: a) Energy storedin multiferroic; b) Energy dissipation in the resistance of the interconnect,Ric ; c) Energy dissipation in the inverse spin-orbit coupling (ISOC) spin tocharge converter Risoc; d) Supply, ground resistance, and transistor losses. Wealso identify the requirements for the resistivity of the spin-orbit couplingmaterials and address the effect of internal resistance of the spin to chargeconversion layer. We provide the material parameter space where MESO (with afan-out of 1 and interconnect) achieves sub 10 aJ switching energy with pathfor scaling via ferroelectric/magnetoelectric/spin-orbit materials development.

Response to Comment on 'Spin-Orbit Logic with Magnetoelectric Nodes: A Scalable Charge Mediated Nonvolatile Spintronic Logic' (arXiv:1607.06690)