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We have presented a compact MOSFET model, which allows us to describe the I-Vcharacteristics of irradiated long-channel and short-channel transistors in alloperation modes at different measurement temperatures and interface trapdensities. The model allows simulating of the off-state and the on-state draincurrents of irradiated MOSFETs based on an equal footing. Particularly, a novelcompact model of the rebound effect in n-MOSFETs was employed for simulation ofthe total dose dependencies of drain currents in the highly scaled 60 nm nodecircuits irradiated up to 1Grad. Compatibility of the model parameter set withBSIM and a single closed form of the model equation imply the possibility ofits easy implementation into the standard CAD tools.

Compact Modeling of MOSFET I-V Characteristics and Simulation of Dose-Dependent Drain Currents