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The intrinsically rectifying-resistive switching (IR-RS) has been regarded asan effective way to address the crosstalk issue, due to the Schottky diodesformed at the metal/oxide interfaces in the ON states to suppress the sneakcurrent at reverse biases. In this letter, we report for the first time anothertype of IR-RS that is related to the built-in homojunction. The IR-RS study wasusually limited to macroscopic samples with micron-order pad-type electrodes,while this work is on NiO nanodots fabricated with ultrathinanodic-aluminum-oxide templates and acting as nanoscaled analogs of realdevices. The NiO nanodots show high storage density and high uniformity, andthe IR-RS behaviors are of good device performances in terms of retention,endurance, switching ratio and rectification ratio. The feasibility of theIR-RS for selection device-free memory application has been demonstrated, bycalculating the maximum crossbar array size under the worst-case scenario to be3 Mbit.

Built-in Homojunction Dominated Intrinsically Rectifying-Resistive Switching in NiO Nanodots for Selection Device-Free Memory Application