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The atomic-scale synthesis of artificial oxide heterostructures offers newopportunities to create novel states that do not occur in nature. The mainchallenge related to synthesizing these structures is obtaining atomicallysharp interfaces with designed termination sequences. Here, we demonstrate thatthe oxygen pressure (PO2) during growth plays an important role in controllingthe interfacial terminations of SrRuO3/BaTiO3/SrRuO3 (SRO/BTO/SRO)ferroelectric capacitors. The SRO/BTO/SRO heterostructures were grown by thepulsed laser deposition (PLD) method. The top SRO/BTO interface grown at highPO2 (around 150 mTorr) usually exhibited a mixture of RuO2-BaO and SrO-TiO2terminations. By reducing PO2, we obtained atomically sharp SRO/BTO topinterfaces with uniform SrO-TiO2 termination. Using capacitor devices withsymmetric and uniform interfacial termination, we were able to demonstrate forthe first time that the ferroelectric (FE) critical thickness can reach thetheoretical limit of 3.5 unit cells (u.c.).

Interface control of ferroelectricity in a SrRuO3/BaTiO3/SrRuO3 capacitor and its critical thickness