English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Fully reconfigurable metasurfaces would enable new classes of optical devicesthat provide unprecedented control of electromagnetic beamforms. The principalchallenge for achieving reconfigurability is the need to generate largetunability of subwavelength, low-Q metasurface resonators. Here, we demonstratelarge refractive index tuning can be efficiently facilitated at mid-infraredwavelengths using novel temperature-dependent control over free-carrierrefraction. In doped InSb we demonstrate nearly two-fold increase in theelectron effective mass leading to a positive refractive index shift({\Delta}n>1.5) far greater than conventional thermo-optic effects. In undopedfilms we demonstrate more than 10-fold change in the thermal free-carrierconcentration producing a near-unity negative refractive index shift.Exploiting both effects within a single resonator system, intrinsic InSb wireson a heavily doped (epsilon near zero) InSb substrate, we demonstratedynamically tunable Mie resonances. The observed larger than line-widthresonance shifts ({\Delta}{\lambda}>1.5{\mu}m) suggest new avenues for highlytunable and reconfigurable mid-infrared semiconductor metasurfaces.

Ultra-wide plasmonic tuning of semiconductor metasurface resonators on epsilon near zero media