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Perpendicular magnetic tunnel junctions (MTJ) with a bottom pinned referencelayer and a composite free layer (FL) are investigated. Different thicknessesof the FL were tested to obtain an optimal balance between tunnelingmagnetoresistance (TMR) ratio and perpendicular magnetic anisotropy. Afterannealing at 400 $^\circ$C, the TMR ratio for 1.5 nm thick CoFeB sublayerreached 180 % at room temperature and 280 % at 20 K with an MgO tunnel barrierthickness corresponding to the resistance area product RA = 10Ohm$\mathrm{\mu}$m$^2$. The voltage vs. magnetic field stability diagramsmeasured in pillar-shaped MTJs with 130 nm diameter indicate the competitionbetween spin transfer torque (STT), voltage controlled magnetic anisotropy(VCMA) and temperature effects in the switching process. An extended stabilityphase diagram model that takes into account all three parameters and theeffective damping measured independently using broadband ferromagneticresonance technique enabled the determination of both STT and VCMA coefficientsthat are responsible for the FL magnetization switching.

Understanding stability diagram of perpendicular magnetic tunnel junctions