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Monochalcogenides of germanium (or tin) are considered as stableisoelectronic and isostructural analogue of black phosphorous. Theirtwo-dimensional (2D) forms have been just predicted to shown strongthickness-dependent physical properties, and even indirect to direct band gapcrossover at the monolayer limit. Here, we demonstrate the synthesis ofatomically thin GeSe by direct sonication-assisted exfoliation of bulkmicrocrystalline powders in solvents. The exfoliated few-layer GeSe sheetscharacterize high crystallinity with lateral sizes over 100 nm and,importantly, strong resistance against oxidation and degradation in ambientconditions. Density functional theory calculation combined with opticalcharacterizations confirm the layer-number dependent optical bandgap, which,for few-layer sheets, is optimal for solar light harvesting, and promising forrelevant applications, such as optoelectronics and photonics.

Sonication-assisted synthesis of semiconducting atomic crystals of  germanium monoselenide: An isostructural and isoelectronic analog of black  phosphorous