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The exact mechanism responsible for the tenfold enhancement ofsuperconducting transition temperature (Tc) in a monolayer iron selenide (FeSe)on SrTiO3(STO) substrate over that of bulk FeSe, is an open issue. We presenthere a coordinated study of electrical transport and low temperature electronenergy-loss spectroscopy (EELS) measurements on FeSe/STO films of variousthicknesses. Our EELS mapping across the FeSe/STO interface shows directevidence of band-bending caused by electrons transferred from STO to FeSelayer. The transferred electrons were found to accumulate only within the firsttwo atomic layers of FeSe films near the STO substrate. Our transport resultsfound a positive backgate applied from STO is particularly effective inenhancing Tc of the films while minimally changing the carrier density. Wesuggest that the positive backgate tends to 'pull' the transferred electrons inFeSe films closer to the interface and thus further enhances both theircoupling to interfacial phonons and the electron-electron interaction withinFeSe films, thus leading to a huge enhancement of Tc in FeSe films.

Direct imaging of electron transfer and its influence on superconducting pairing at FeSe/SrTiO3 interface