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The field-effect-induced modulation of transport properties of 2-dimensionalelectron gases residing at the LaAlO$_3$/SrTiO$_3$ and LaGaO$_3$/SrTiO$_3$interfaces has been investigated in a back-gate configuration. Both sampleswith crystalline and with amorphous overlayers have been considered. We showthat the "na\"ive" standard scenario, in which the back electrode and the2-dimensional electron gas are simply modeled as capacitor plates, dramaticallyfails in describing the observed phenomenology. Anomalies appearing after thefirst low-temperature application of a positive gate bias, and causing anon-volatile perturbation of sample properties, are observed in all oursamples. Such anomalies are shown to drive low-carrier density samples to apersistent insulating state. Recovery of the pristine metallic state can beeither obtained by a long room-temperature field annealing, or,instantaneously, by a relatively modest dose of visible-range photons.Illumination causes a sudden collapse of the electron system back to themetallic ground state, with a resistivity drop exceeding four orders ofmagnitude. The data are discussed and interpreted on the base of the analogywith floating-gate MOSFET devices, which sheds a new light on the effects ofback-gating on oxide-based 2-dimensional electron gases. A more formalapproach, allowing for a semi-quantitative estimate of the relevant surfacecarrier densities for different samples and under different back-gate voltages,is proposed in the Appendix.

Non-volatile, reversible metal-insulator transition in oxide interfaces controlled by gate voltage and light