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Magnetic tunnel junctions (MTJ) have been grown by using molecular beamepitaxy on c-plane Al2O3 substrates. The MTJ stacks consist of twoferromagnetic hcp-Co layers separated by a thin insulating h-BN barrier. Thesamples have been grown in a single run revealing single crystalline epitaxialstructures with sharp interfaces as observed by applying transmission electronmicroscopy. The in-plane magnetization experiments have revealed separatemagnetization switching of a thin top Co (soft) layer and a thick bottom Co(hard) layer. At zero magnetic field the two Co layers are found in anantiparallel state.

Separate magnetization switching of hexagonal Co/BN/Co junctions grown epitaxially on c-sapphire