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Often a surface sensitive analytical technique in combination with sampleerosion by inert ion sputtering is used for compositional in-depth analysis ofsolid state samples. Layer by layer the sample gets eroded and then thecomposition of the actual surface is estimated. The elemental detection limitscan be increased by spending more time for the measurement in each sputterdepth of the profile measurement. But during this time a significant samplesurface recontamination with the element under investigation via adsorptionform the vacuum has to be avoided. Commonly the vacuum quality of an analyticalinstrument is monitored using the base pressure of the UHV system. This articlepresents a novel method, which improves this crude approach. Therecontamination of a sputtered Ti surface by adsorbed residual gas particleswas used to monitor the sputter depth profile specific vacuum condition of anXPS microprobe Quantum 2000 over a 4 years period. This new method is suitableto monitor the condition of every sputter depth profiling instrument.

Vacuum Quality Monitoring of Analytical Sputter Depth Profile Equipment by Recontamination Measurements of a Sputtered Ti Surface