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Earlier, the DC hole-current modeling of PCMO RRAM by drift-diffusion (DD)including self-heating (SH) in TCAD (but without ionic transport) was able toexplain the experimentally observed SCLC characteristics, prior to resistiveswitching. Further, transient analysis using DD+SH model was able to reproducethe experimentally observed fast current increase at ~100ns timescale followedby saturation increases, prior to resistive switching. However, resistiveswitching requires the inclusion of ionic transport. We propose aReaction-Drift (RD) model of oxide ions, which is combined with the DD+SHmodel. Experimentally, SET operations consist of 3 stages and RESET operationsconsists of 4 stages. The DD+SH+RD model is able to reproduce the entiretransient behavior over 10$^{-8}$-1s range in timescale for both SET and RESEToperations for a range of bias, temperature. Remarkably, a universal RESETbehaviour of $log(I)\propto m*log(t)$, where $m\approx -1/10$, is reproduced.The quantitatively different voltage time dilemma for SET and RESET is alsoreplicated for a range of ambient temperature. This demonstrates acomprehensive model for resistance switching in PCMO based RRAM.

Reaction-Drift Model for Switching Transients in Pr$_{0.7}$Ca$_{0.3}$MnO$_3$ Based Resistive RAM