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Porous silicon (PSi) layers has been prepared in this work viaphotoelectrochemical (PEC) etching process of an n type silicon wafers of tworesistivities (3.5 ohm.cm and 0.02 ohm.cm) in hydrofluoric (HF) acid of 24.5precent concentration at different etching times (5 to 25 min). The irradiationhas been achieved using laser beam of 2W power and 810 nm wavelength. We havestudied the morphological and structural properties of PSi layers using thetechniques of Xray Diffraction (XRD) and Scanning Electron Microscopy (SEM) andGravimetric method. The Xray Diffraction data shows that the structure aspectof PSi layers remains crystalline as well as the decreasing of diffractionangle (thetaB) of Xray from PSi layers (29 to 26 degree) and increasing of thelattice parameter values of PSi structures with increasing of etching timesfrom 5 to 25 min., and the resistivity of silicon substrates from 0.02 to 3.5ohm.cm. The nanocrystallite size is decreasing from (20.72 to 5.13 nm) withincreasing of etching times, and the resistivity of silicon substrates. The SEMimages shows that the values of pore width and PSi layer thickness increasesfrom (0.5 to 6.25 micrometer) and (6.7 to 47 micrometer) respectively withincreasing of etching times and silicon substrates resistivities, while thevalues of the thickness of walls between pores has been varied from (1.25 to0.03 micrometer) with increasing of etching times and silicon substratesresistivities. The pore shape of pores has been varied from Cylindrical toRectangular and to Starful with varied of etching conditions. Further themeasured specific surface area of PSi layers has been increased from (7.43 to235.35 m2/cm3) with increasing of etching times and silicon substratesresistivities.

Structural, Morphological and Electrical Properties of Porous Silicon Prepared Under Laser Illumination