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We demonstrate a series of InGaN/GaN double quantum well nanostructureelements. We grow a layer of 2 {\mu}m undoped GaN template on top of a(0001)-direction sapphire substrate. A 100 nm SiO2 thin film is deposited ontop as a masking pattern layer. This layer is then covered with a 300 nmaluminum layer as the anodic aluminum oxide (AAO) hole pattern layer. Afteroxalic acid etching, we transfer the hole pattern from the AAO layer to theSiO2 layer by reactive ion etching. Lastly, we utilize metal-organic chemicalvapor deposition to grow GaN nanorods approximately 1.5 {\mu}m in size. We thengrow two layers of InGaN/GaN double quantum wells on the semi-polar face of theGaN nanorod substrate under different temperatures. We then study thecharacteristics of the InGaN/GaN quantum wells formed on the semi-polar facesof GaN nanorods. We report the following findings from our study: first, usingSiO2 with repeating hole pattern, we are able to grow high-quality GaN nanorodswith diameters of approximately 80-120 nm; second, photoluminescence (PL)measurements enable us to identify Fabry-Perot effect from InGaN/GaN quantumwells on the semi-polar face. We calculate the quantum wells' cavity thicknesswith obtained PL measurements. Lastly, high resolution TEM images allow us tostudy the lattice structure characteristics of InGaN/GaN quantum wells on GaNnanorod and identify the existence of threading dislocations in the latticestructure that affects the GaN nanorod's growth mechanism.

Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods