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The ATLAS experiment will undergo a major upgrade of the tracker system inview of the high luminosity phase of the LHC (HL-LHC) to start operation in2026. The most severe challenges are to be faced by the innermost layers of thepixel detector which will have to withstand a radiation fluence of up to$1.4\times10^{16}\,$n$_\text{eq}$/cm$^{2}$. Thin planar pixel modules arepromising candidates to instrument these layers, thanks to the small materialbudget and their high charge collection efficiency after irradiation. Sensorsof $100-200\,\mu$m thickness, interconnected to FE-I4 read-out chips, arecharacterized with radioactive sources as well as testbeams at the CERN-SPS andDESY. The performance of sensors irradiated up to a fluence of $5\times10^{15}\,$n$_\text{eq}$/cm$^{2}$ is compared in terms of charge collection andhit efficiency. Highly segmented sensors are a challenge for the tracking inthe forward region of the pixel system at the HL-LHC. To reproduce theperformance of $50$x$50\,\mu$m$^2$ pixels at high pseudo-rapidities, FE-I4compatible planar pixel sensors are studied before and after irradiation inbeam tests at high incidence angle ($80^\circ$) with respect to the short pixeldirection. Results on cluster shape and hit efficiency will be shown.

Characterization of Novel Thin N-in-P Planar Pixel Modules for the ATLAS Inner Tracker Upgrade