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Atomic disorder is a common limiting factor for the low-temperature mobilityin monolayer transition-metal dichalcogenides (TMDs; MX2). Here, we study theeffect of often occurring atomic vacancies on carrier scattering and transportin p- and n-type monolayer MoS2. Due to charge trapping in vacancy-inducedin-gap states, both neutral and charged vacancies resembling, respectively,short-range and combined short-range and long-range Coulomb scatterers, must beconsidered. Using the T-matrix formalism, we demonstrate a strongrenormalization of the Born description of short-range scattering, manifestedin a pronounced reduction and a characteristic energy dependence of thescattering rate. As a consequence, carrier scattering in TMDs with chargedvacancies is dominated by the long-range Coulomb-disorder scattering, givingrise to a strong screening-induced temperature and density dependence of thelow-temperature carrier mobility. For TMDs with neutral vacancies, the absenceof intrinsic Coulomb disorder results in significantly higher mobilities aswell as an unusual density dependence of the mobility which decreases with thecarrier density. Our work illuminates the transport-limiting effects ofatomic-vacancy scattering relevant for high-mobility TMD devices.

Electron and hole transport in disordered monolayer MoS2: atomic vacancy-induced short-range and Coulomb disorder scattering