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Nanoribbons of MoS$_2$ present a unique electronic structure that consists ofa semiconducting bulk bounded by metallic edges; same holds for otherTransition-Metal Dichalcogenides (TMDs) (Mo-,W-,S$_{2}$,Se$_{2}$).  We perform first-principles calculations for TMD nanoribbons withreconstructed zig-zag metal terminated edges that contain chalcogen adatoms.All nanorobbons have possitive edge energies when the chemical potential ofchalcogens is close to the energy of solids, and negative edge energies forhigh chemical potential. The reconstruction with two chalcogen adatoms isexpected to be the most stable one. In all nanoribbons, a metallic phase isfound near their edges, with the Fermi level of this metallic phase being lowerthan the Fermi level of the 2D material.

Stability of metallic edges and Fermi-level pinning in transition-metal dichalcogenide nanoribbons